DocumentCode
1284362
Title
Modeling and optimization of traveling-wave LiNbO3 interferometric modulators
Author
Chung, Haeyang ; Chang, William S C ; Adler, Eric L.
Author_Institution
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Volume
27
Issue
3
fYear
1991
fDate
3/1/1991 12:00:00 AM
Firstpage
608
Lastpage
617
Abstract
The characteristics of high-speed LiNbO3 electrooptic interferometric modulators/switches are discussed from the viewpoint of optimization of device performance. Specific calculations of the impedance, effective microwave index, and microwave attenuation parameter are presented as a function of the microwave electrode parameters including the buffer layer thickness. The authors have found that the optimization procedure is considerably simplified when the range of electrode and microwave parameters that satisfy a given bandwidth requirement is first determined
Keywords
electro-optical devices; integrated optics; light interferometers; lithium compounds; optical modulation; optical switches; optimisation; LiNbO3; bandwidth requirement; buffer layer thickness; effective microwave index; high-speed LiNbO3 electrooptic interferometric modulators/switches; impedance; integrated optics; microwave attenuation parameter; microwave electrode parameters; optimization; traveling-wave LiNbO3 interferometric modulators; Bandwidth; Buffer layers; Coplanar waveguides; Electrodes; Electrooptic modulators; Microwave devices; Optical attenuators; Optical buffering; Optical interferometry; Optical waveguides;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.81370
Filename
81370
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