DocumentCode
1284368
Title
Limitations of LDD types of structures in deep-submicrometer MOS technology
Author
Tasch, Al F. ; Shin, H. ; Bordelon, T.J. ; Maziar, Christine M.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Volume
11
Issue
11
fYear
1990
Firstpage
517
Lastpage
519
Abstract
Lightly doped drain (LDD) types of MOSFET structures have been analyzed in detail in order to understand the issues and trade-offs in the application of these structures to deep-submicrometer technology (L/sub gate/>
Keywords
VLSI; hot carriers; insulated gate field effect transistors; semiconductor technology; 0.35 micron; LDD types of structures; MOSFET structures; N/sup -/ region; VLSI; applicability of LDD MOSFETs; channel doping compensation; charge-sharing effects; conflict in design requirements; deep-submicrometer MOS technology; deep-submicrometer technology; gate length; graded-drain profile; hot-carrier generation; limitations; reduction of hot-carrier effects; scaling; submicron MOS technology; suppression of charge sharing; trade-offs; Degradation; Doping profiles; FETs; Hot carrier effects; Hot carriers; Implants; MOSFET circuits; Manufacturing; Predictive models; Temperature distribution;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.63018
Filename
63018
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