Optimization of multiple quantum well structures for waveguide electroabsorption modulators

Author

Chin, Mee K. ; Yu, P.K.L. ; Chang, William S C

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

27

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

696

Lastpage

701

Abstract

A systematic approach for optimizing the performance of a multiple quantum well electroabsorption waveguide modulator is presented. The primary criterion of the modulator performance for digital and analog applications is taken to be the change of transmission ΔT at a given applied electric field. The design variables used to maximize ΔT include the device length (L), as well as the quantum well width and composition which determine the electroabsorption (Δα) and the residual absorption (α₀) at a given photon wavelength. Within the range of ΔT that can satisfy the system requirement, the L is then minimized to maximize the bandwidth. The effect of the guided wave index profile and the electrical properties of the p-i-n structure on the bandwidth and the drive voltage requirement is discussed

Keywords

electro-optical devices; electroabsorption; integrated optics; optical modulation; optical waveguides; optimisation; semiconductor quantum wells; AlGaAs-GaAs; applied electric field; device length; drive voltage requirement; electrical properties; electroabsorption waveguide modulator; guided wave index profile; modulator performance optimisation; multiple quantum well structures; p-i-n structure; photon wavelength; quantum well width; residual absorption; semiconductors; waveguide electroabsorption modulators; Absorption; High speed optical techniques; Optical attenuators; Optical modulation; Optical noise; Optical receivers; Optical waveguides; Quantum well devices; Signal to noise ratio; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.81379

Filename

81379