Field induced optical effects in coupled quantum wells

Author

Chan, Yuen Chuen ; Tada, Kunio

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

Volume

27

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

702

Lastpage

707

Abstract

The electro-optical effects of GaAs-AlAs quantum wells coupled via a thin AlAs separating layer are studied theoretically and experimentally by absorption current spectroscopy. It has been found that such coupled quantum well structures exhibit unique absorption features that are different from isolated quantum wells, and large changes of the absorption coefficient are possible through the field induced decoupling effect involving both quantum well structures for electrons and holes. Application of the coupled quantum well structures in intensity modulators is also discussed

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electro-optical effects; gallium arsenide; optical modulation; semiconductor quantum wells; GaAs-AlAs quantum wells; III-V semiconductors; absorption current spectroscopy; coupled quantum well structures; electro-optical effects; electrons; field induced decoupling effect; field induced optical effects; holes; intensity modulators; isolated quantum wells; thin AlAs separating layer; Absorption; Charge carrier processes; Energy states; Epitaxial layers; Intensity modulation; Optical coupling; Potential well; Quantum mechanics; Spectroscopy; Wave functions;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.81380

Filename

81380