Title :
Potential impact of emerging semiconductor technologies on advanced power electronic systems
Author_Institution :
Gen. Electr. Co., Schenectady, NY, USA
Abstract :
It is shown that a simple expression for k/sub D/=R/sub on/*C/sub in/ of a power semiconductor device can be used to evaluate the optimum performance feasible from a given material technology. A high-density, high-frequency microelectronic power supply based on synchronous rectifier switching topology is used to illustrate the potential impact of emerging semiconductor technologies on advanced power electronic systems. It is shown that optimum power devices based on wide-energy-bandgap semiconductors such as silicon carbide and diamond provide the basis for power conversion at very high frequencies.<>
Keywords :
diamond; elemental semiconductors; power electronics; semiconductor materials; silicon compounds; C; SiC semiconductor; advanced power electronic systems; diamond semiconductors; high-frequency microelectronic power supply; material technology; optimum performance feasible; optimum power devices; potential impact of emerging semiconductor technologies; power conversion at very high frequencies; synchronous rectifier switching topology; wide bandgap semiconductors; wide-energy-bandgap semiconductors; Circuit topology; Materials science and technology; Microelectronics; Power conversion; Power electronics; Power semiconductor devices; Power semiconductor switches; Power supplies; Rectifiers; Silicon carbide;
Journal_Title :
Electron Device Letters, IEEE
