DocumentCode
1284451
Title
An InAs channel heterojunction field-effect transistor with high transconductance
Author
Yoh, Kanji ; Moriuchi, Toshiaki ; Inoue, Masataka
Author_Institution
Dept. of Electr. Eng., Osaka Inst. of Technol., Japan
Volume
11
Issue
11
fYear
1990
Firstpage
526
Lastpage
528
Abstract
A report is presented on an InAs channel field-effect transistor (FET) based on AlGaSb/InAs/AlSb/AlGaSb structures grown by molecular-beam epitaxy. Excellent pinch-off characteristics have been obtained. An FET with a gate length of 1.7 mu m showed transconductances ranging from 460 mS/mm (at V/sub ds/=0.5 V) to 509 mS/mm (at V/sub ds/=1 V) and a K factor of 1450 mS/Vmm (at V/sub ds/=1 V) at room temperature.<>
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; 0.5 to 1 V; 1.7 micron; AlGaSb-InAs-AlSb-AlGaSb; HEMT; HFET; InAs channel; K factor; MBE; gate length; heterojunction field-effect transistor; molecular-beam epitaxy; pinch-off characteristics; room temperature; transconductances; Buffer layers; FETs; Gallium arsenide; HEMTs; Heterojunctions; Lattices; MODFETs; Molecular beam epitaxial growth; Substrates; Transconductance;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.63021
Filename
63021
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