Analysis and design of high-speed high-efficiency GaAs-AlGaAs double-heterostructure waveguide phase modulator

Author

Lee, Sang Sun ; Ramaswamy, Ramu V. ; Sundaram, Veeravana S.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

27

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

726

Lastpage

736

Abstract

A P-p-i-n-N, GaAs-AlGaAs, TE/TM mode phase modulator, which has both the high phase shift efficiency of a p-n homojunction modulator and the high speed associated with a P-i-N modulator, is considered by incorporating p- and n-GaAs buffer layers and utilizing the higher order effects in these layers. The device structure is analyzed by considering the individual contributions of both the electrooptic [linear electrooptic (LEO) and quadratic electrooptic (QEO)] effects and the free carrier [plasma (PL) and bandgap shift (BS)] effects. These effects are studied in detail as a function of the reverse bias, operating wavelength, doping concentration, and intrinsic layer thickness. The results are in excellent agreement with the theoretical predictions

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical modulation; III-V semiconductor; bandgap shift effects; device structure; doping concentration; free carrier effects; high speed high efficiency GaAs-AlGaAs double heterostructure waveguide phase modulator; higher order effects; intrinsic layer thickness; linear electrooptic effects; operating wavelength; plasma effects; quadratic electrooptic effects; reverse bias; Buffer layers; Doping; Electrooptic devices; Low earth orbit satellites; PIN photodiodes; Phase modulation; Photonic band gap; Plasma devices; Plasma waves; Tellurium;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.81383

Filename

81383