InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

Author

Soole, Julian B D ; Schumacher, Hermann

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

27

Issue

3

fYear

1991

fDate

3/1/1991 12:00:00 AM

Firstpage

737

Lastpage

752

Abstract

A review is presented of the properties of interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InGaAs-InP material system, and the performance achieved by experimental devices is discussed. The experimental work concentrates on the barrier-enhanced lattice-matched InAlAs-InGaAs device grown by low pressure organometallic chemical vapor deposition (OMCVD), which has to date yielded detectors with the highest performance characteristics. Current research on their integration with FETs to form monolithic receivers and with waveguides for on-chip optical signal processing is also included

Keywords

III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; metal-semiconductor-metal structures; optical communication equipment; photodetectors; photodiodes; reviews; FETs; III-V semiconductors; InGaAs-InP material system; barrier enhanced lattice matched InAlAs-InGaAs device; integration; interdigitated metal-semiconductor-metal Schottky barrier photodetectors; long wavelength optical communications; low pressure organometallic chemical vapor deposition; monolithic receivers; on-chip optical signal processing; performance characteristics; review; waveguides; Chemical vapor deposition; Detectors; FETs; Indium gallium arsenide; Inorganic materials; Optical receivers; Optical signal processing; Optical waveguides; Photodetectors; Schottky barriers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.81384

Filename

81384