Title :
A monolithic long wavelength photoreceiver using heterojunction bipolar transistors
Author :
Chandrasekhar, S. ; Johnson, Bart C. ; Tokumitsu, Eisuke ; Dentai, Andrew G. ; Joyner, Charles H. ; Gnauck, Alan H. ; Perino, Joseph S. ; Qua, G.J.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
An optoelectronic integrated circuit (OEIC), consisting of a p-i-n photodetector and heterojunction bipolar transistors connected together as a transimpedance photoreceiver, has been fabricated. The monolithic photoreceiver was made from InP/InGaAs-based heterostructures and had a bandwidth of 500 MHz with a transimpedance of 1375 Ω. At a signaling rate of 1 Gb/s, the measured receiver sensitivity was -26.1 dBm at a wavelength of 1.5 μm. A dynamic range greater than 25 dB and an equivalent input noise current of 11 pA √Hz were also measured
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; receivers; 1 Gbit/s; 1.5 micron; 500 MHz; III-V semiconductors; InP-InGaAs based heterostructures; bandwidth; dynamic range; equivalent input noise current; heterojunction bipolar transistors; monolithic long wavelength photoreceiver; optoelectronic integrated circuit; p-i-n photodetector; receiver sensitivity; signaling rate; transimpedance photoreceiver; Bandwidth; Bipolar integrated circuits; Current measurement; Dynamic range; Heterojunction bipolar transistors; Indium phosphide; Optoelectronic devices; PIN photodiodes; Photodetectors; Wavelength measurement;
Journal_Title :
Quantum Electronics, IEEE Journal of
