Title :
On the effects of hot electrons on the DC and RF characteristics of lattice-matched InAlAs/InGaAs/InP HEMTs
Author :
Menozzi, R. ; Borgarino, M. ; Baeyens, Y. ; Van Hove, M. ; Fantini, F.
Author_Institution :
Parma Univ., Italy
Abstract :
The authors for the first time present results of hot electron stressing of InAlAs/InGaAs/InP high electron mobility transistors (HEMTs). High drain bias, room temperature stress cycles have been applied to 0.3 μm, SiN-passivated, lattice-matched devices, and the changes of the DC and RF (up to 50 GHz) characteristics have been studied. Both the DC and RF device gain degrade after stressing; the effect of the stress on the unity current gain cutoff frequency fT is studied under different bias conditions. Results indicate that surface degradation may be responsible for the observed changes.
Keywords :
III-V semiconductors; S-parameters; aluminium compounds; gallium arsenide; high electron mobility transistors; hot carriers; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; passivation; semiconductor device reliability; surface phenomena; 0.3 micron; 50 GHz; DC characteristics; DC device gain; InAlAs-InGaAs-InP; RF characteristics; RF device gain; SiN; SiN-passivated devices; bias conditions; high drain bias; high electron mobility transistors; hot electron stressing; lattice-matched HEMT; room temperature stress cycles; surface degradation; unity current gain cutoff frequency; Degradation; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Radio frequency; Stress; Temperature;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
