Nonlinear semiconductor Bragg reflection waveguide structures

The waveguiding properties of finite Bragg reflection waveguides have been investigated in both linear and nonlinear regimes. The guiding properties of both linear and nonlinear BRWs have been shown to depend quite sensitively upon the core layer dimension. A feature of the analysis of the nonlinear case has been the use of Jacobian elliptic functions of complex modulus and argument to give an analytic prescription of the optical field. With structures incorporating a defocusing nonlinearity, it has been shown that BRWs may be optical-intensity tuned to support bound modes. For optical nonlinearities typical of III-V semiconductors, the threshold optical power required to access guided bound modes can be provided by diode lasers.<>