Title :
Selectively regrown contacts to field-effect transistors with two-dimensional electron-gas channels
Author :
Palevski, A. ; Solomon, Paul M. ; Kuech, T.F. ; Tischler, Mike ; Umbach, C.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
The authors have fabricated for the first time heterostructure field-effect transistors where the two-dimensional electron gas (2-DEG) channel is directly contacted by selectively regrown epitaxial GaAs contacts. Both modulation-doped FETs (MODFETs) and semiconductor-insulator-semiconductor FETs (SISFETs) were fabricated. Contact resistances were low, as evidenced by high transconductances and improvements to the transconductance at low temperatures. The low resistance and shallow nature of the regrown contacts should permit scaling of these structures to very small dimensions.<>
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; insulated gate field effect transistors; ohmic contacts; semiconductor technology; semiconductor-metal boundaries; HEMT; HFET; MODFETs; SISFETs; directly contacted channel; heterostructure field-effect transistors; high transconductances; low-resistance contacts; modulation-doped FETs; regrown contacts; scaling; selectively regrown contacts; selectively regrown epitaxial GaAs contacts; semiconductor-insulator-semiconductor FETs; shallow contacts; transconductance at low temperatures; two-dimensional electron-gas channels; Annealing; Contact resistance; Electrons; Epitaxial layers; FETs; Gallium arsenide; HEMTs; III-V semiconductor materials; MODFETs; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
