Operation of a resistive-gate MESFET oscillator in the single-domain transit-time mode

Author

Yin, Yiwen ; Fu, Hua, Jr. ; Cooper, James A. ; Balzan, Matthew L. ; Geissberger, Arthur E.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

11

Issue

11

fYear

1990

Firstpage

538

Lastpage

540

Abstract

Resistive-gate (RG) MESFET oscillators having gate sheet resistance of 30 k Omega /sq are operated in the single-domain transit-time mode. Frequencies from 6 to 28 GHz are observed, inversely proportional to channel length. Unlike a lateral Gunn diode, operation is essentially independent of drain-to-source voltage, indicating that channel conditions are controlled by the potential drop along the resistive gate. The authors conclude that contiguous domains cannot form in the channel unless the gate sheet resistance is reduced to about 3 k Omega /sq.<>

Keywords

Schottky gate field effect transistors; microwave oscillators; solid-state microwave devices; transit time devices; 6 to 28 GHz; gate sheet resistance; independent of drain-to-source voltage; operation; resistive-gate MESFET oscillator; single-domain transit-time mode; Avalanche breakdown; Doping; Frequency; Gallium arsenide; MESFET integrated circuits; MODFET integrated circuits; Microwave devices; Microwave oscillators; Roentgenium; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63025

Filename

63025