DocumentCode
1285016
Title
Gate-resistance-limited switching frequencies of power MOSFETs
Author
Shenai, Krishna
Author_Institution
General. Electric Co., Schenectady, NY, USA
Volume
11
Issue
11
fYear
1990
Firstpage
544
Lastpage
546
Abstract
High-frequency switching limitation of a power MOSFET resulting from large gate resistance is studied. It is shown that a maximum gate switching frequency can be identified to minimize resistive power dissipation in the gate. Power MOSFETs with refractory silicide gates are shown to result in more than a fivefold improvement in this frequency compared to conventional heavily POCl/sub 3/-doped polysilicon-gated MOSFETs with metal gate runners.<>
Keywords
insulated gate field effect transistors; metallisation; power transistors; semiconductor device models; gate resistance limited switching frequency; maximum gate switching frequency; metal gate runners; minimize resistive power dissipation; polycide gate; polysilicon-gated MOSFETs; power MOSFETs; refractory silicide gates; switching frequency limitation; Area measurement; Capacitance; Electrical resistance measurement; MOSFETs; Power conversion; Power dissipation; Power measurement; Power systems; Silicides; Switching frequency;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.63027
Filename
63027
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