Title :
A general gate-current p-MOS lifetime prediction method applicable to different channel structures
Author :
Doyle, Brian S. ; Mistry, Kaizad R.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
A recently developed surface-channel p-MOS lifetime prediction technique based on injection gate charge is extended to buried-channel devices. It is shown that a more general form of the equation governing the degradation accurately describes the degradation behavior of both surface-channel and buried-channel transistors, indicating that the method has general applicability for p-channel transistors.<>
Keywords :
MOS integrated circuits; VLSI; hot carriers; insulated gate field effect transistors; life testing; reliability; semiconductor device models; buried-channel devices; buried-channel transistors; degradation behavior; gate-current p-MOS lifetime prediction method; hot carrier effect; injection gate charge; p-channel transistors; submicron transistors; surface channel transistors; Circuits; Degradation; Equations; Hot carrier effects; MOSFETs; Prediction methods; Testing; Transconductance; Transistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
