A simple characterization method for silicon-on-insulator materials using a depletion-mode MOSFET

Author

Henderson, W.R. ; Pourcin, L. ; Ghibaudo, G. ; Vu, Duy-Phach

Author_Institution

Kopin Corp., Taunton, MA, USA

Volume

11

Issue

11

fYear

1990

Firstpage

552

Lastpage

555

Abstract

A simple method is proposed for extracting the electrical parameters of a silicon-on-insulator (SOI) material from a depletion-mode MOSFET. It is based on an analysis of static input current-voltage I/sub D/(V/sub G/) and transconductance-voltage g/sub m/(V/sub G/) characteristics in the linear region. Functions varying linearly with gate voltage are constructed from I/sub D/(V/sub G/) and g/sub m/(V/sub G/) functions. These new functions allow a straightforward determination of the parameters usually obtained from a capacitance-voltage measurement (doping level, oxide charge, etc.) and also the bulk-layer and accumulation-layer carrier mobility.<>

Keywords

elemental semiconductors; insulated gate field effect transistors; materials testing; semiconductor-insulator boundaries; silicon; SOI material; accumulation-layer carrier mobility; analysis of static input current-voltage; bulk layer carrier mobility; characterization method; depletion-mode MOSFET; linear region; silicon-on-insulator materials; transconductance-voltage; Capacitance measurement; Capacitance-voltage characteristics; Channel bank filters; Current measurement; MOSFET circuits; Neodymium; OFDM modulation; Silicon on insulator technology; Virtual colonoscopy; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63030

Filename

63030