Title :
60-GHz power performance of ion-implanted In/sub x/Ga/sub (1-x/)As/GaAs MESFETs
Author :
Feng, Milton ; Lau, C.L. ; Lepkowski, Thomas R. ; Brusenback, Paul ; Schellenberg, James M.
Author_Institution :
Ford Microelectron. Inc., Colorado Springs, CO, USA
Abstract :
State-of-the-art 60-GHz power performance is reported for ion-implanted InGaAs/GaAs MESFETs with 0.25*200- mu m gate length. At output power of 100 mW, a power-added efficiency of 15% and associated gain of 4.2 dB were obtained and a saturated output power of 121 mW was achieved for the same device. These results are comparable to the best reported millimeter-wave power performance of InGaAs/GaAs pseudomorphic HEMTs.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ion implantation; solid-state microwave devices; 0.25 micron; 100 mW; 121 mW; 15 percent; 200 micron; 4.2 dB; 60 GHz; In/sub x/Ga/sub 1-x/As-GaAs; MESFETs; MM-wave power performance; gate length; ion-implanted; power performance; power-added efficiency; saturated output power; Gain; Gallium arsenide; Indium gallium arsenide; MESFETs; MISFETs; Millimeter wave communication; Millimeter wave technology; Power amplifiers; Power generation; Voltage;
Journal_Title :
Electron Device Letters, IEEE
