DocumentCode
1285165
Title
Comments on "Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection" [and reply]
Author
Ledentsov, Nikolay N. ; Kirstaedter, N. ; Bimberg, Dieter ; Brueck, Steven R. J. ; Sandusky, J.V.
Author_Institution
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Volume
8
Issue
9
fYear
1996
Firstpage
1276
Lastpage
1277
Abstract
Discusses InGaAs-GaAs quantum dot injection lasing by a commentor and the original authors reply to this comment.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; self-adjusting systems; semiconductor quantum dots; In/sub 0.5/Ga/sub 0.5/As quantum dots; InGaAs-GaAs; InGaAs-GaAs quantum dot injection lasing; current injection; self-organized; three-dimensionally quantum-confined sublevel; Electroluminescence; Indium gallium arsenide; Laser stability; Luminescence; Photoluminescence; Quantum dot lasers; Quantum dots; Stationary state; Temperature; Threshold current;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.531861
Filename
531861
Link To Document