• DocumentCode
    1285186
  • Title

    Characteristic temperature of quantum dot laser

  • Author

    Asryan, L.V. ; Suris, R.A.

  • Author_Institution
    A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
  • Volume
    33
  • Issue
    22
  • fYear
    1997
  • fDate
    10/23/1997 12:00:00 AM
  • Firstpage
    1871
  • Lastpage
    1872
  • Abstract
    The characteristic temperature of a quantum dot laser. T0 , has been calculated for the first time considering carrier recombination in the optical confinement layer and violation of the charge neutrality in QDs. T0 is shown to fall off profoundly with increasing temperature, which is in line with the available experimental results
  • Keywords
    carrier mobility; electron-hole recombination; quantum well lasers; semiconductor quantum dots; carrier recombination; characteristic temperature; charge neutrality; optical confinement layer; quantum dot laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19971286
  • Filename
    630328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1285186