DocumentCode
1285192
Title
Enhanced activation of Ga implanted Si through rapid thermal processing
Author
Davies, D.E.
Author_Institution
EOARD, London
Volume
24
Issue
1
fYear
1988
fDate
1/7/1988 12:00:00 AM
Firstpage
35
Lastpage
36
Abstract
Metastable activation of Ga implants has been achieved through rapid annealing. Carrier concentrations of ≃2×1020 cm-3 exceed the Ga solubility limit by a factor of five and are comparable to boron doping levels. Retention of these doping levels severely limits any subsequent thermal processing
Keywords
annealing; elemental semiconductors; gallium; silicon; Si:Ga; doping levels; metastable activation; rapid annealing; rapid thermal processing; solubility limit;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8147
Link To Document