Optical carrier linewidth broadening in a traveling wave semiconductor laser amplifier

Author

Hinton, Kerry

Author_Institution

Telecom Australia Res. Lab., Clayton, Vic., Australia

Volume

26

Issue

7

fYear

1990

fDate

7/1/1990 12:00:00 AM

Firstpage

1176

Lastpage

1182

Abstract

The powerful spectral densities of the phase, intensity, and electron density noise derived in a previous paper are used to calculate the linewidth broadening of an optical carrier as it propagates through a traveling-wave semiconductor laser amplifier. It is found that the amount of broadening is dependent upon the input linewidth as well as amplifier parameters. The effect of saturation due to high input power is considered, as well as the operational regime where intensity, rather than phase, noise determines the amplifier output line shape. An example system calculation is used to demonstrate the impact of amplifier line broadening on system design

Keywords

electron device noise; laser theory; semiconductor junction lasers; spectral line breadth; amplifier line broadening; amplifier output line shape; amplifier parameters; carrier linewidth broadening; electron density noise; input linewidth; intensity noise; optical carrier; optical saturation; phase noise; powerful spectral densities; traveling wave semiconductor laser amplifier; Electron optics; Laser noise; Optical amplifiers; Optical noise; Optical propagation; Optical saturation; Phase noise; Semiconductor device noise; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.59656

Filename

59656