DocumentCode :
1285303
Title :
GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach
Author :
Chen, Zhi ; Mohammad, S.Noor
Author_Institution :
Coordinated Sci. Lab., Illinois Univ., Urbana, IL, USA
Volume :
33
Issue :
22
fYear :
1997
fDate :
10/23/1997 12:00:00 AM
Firstpage :
1906
Lastpage :
1907
Abstract :
A high quality Si3N4/Si/p-GaAs MIS structure has been obtained by the ex-situ growth approach. An interface trap density as low as 9×1010 eV 1 cm-2 was obtained from the conductance measurements. A depletion-mode MISFET with a transconductance of 85 mS/mm has been fabricated using this ex-situ growth approach
Keywords :
III-V semiconductors; MIS structures; MISFET; gallium arsenide; molecular beam epitaxial growth; Si3N4-Si-GaAs; Si3N4/Si/p-GaAs MIS structure; conductance; depletion-mode MISFET; ex-situ growth; field effect transistor; interface trap density; metal-insulator-semiconductor structure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19971276
Filename :
630361
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1285303
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