DocumentCode
1285307
Title
Observation of random telegraph signal in SiC Schottky diodes
Author
Ouisse, T. ; Platel, E. ; Billon, T. ; Lahreche, H.
Author_Institution
Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France
Volume
33
Issue
22
fYear
1997
fDate
10/23/1997 12:00:00 AM
Firstpage
1907
Lastpage
1909
Abstract
Discrete time switching events are observed when measuring the current of silicon carbide Schottky diodes. RTS noise occurs whenever an excess current is measured. The random telegraph signal (RTS) is shown to originate from localised defective areas, whose conductivity may be modulated by the single trapping/detrapping of an electron in the depletion layer, in the neighbourhood of the localised current path
Keywords
Schottky diodes; electron traps; random noise; semiconductor device noise; semiconductor materials; silicon compounds; RTS noise; SiC; depletion layer; discrete time switching event; electron detrapping; electron trapping; excess current; random telegraph signal; silicon carbide Schottky diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19971302
Filename
630362
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