Title :
Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm
Author :
Barraud, S. ; Coquand, R. ; Cassé, M. ; Koyama, M. ; Hartmann, J. -M ; Maffini-Alvaro, V. ; Comboroure, C. ; Vizioz, C. ; Aussenac, F. ; Faynot, O. ; Poiroux, T.
Author_Institution :
LETI, Commissariat a l´´Energie Atomique et aux Energies Alternatives, Grenoble, France
Abstract :
In this letter, the electrostatic and the performance of cylindrical silicon nanowire (NW) MOSFETs with an omega-shaped gate and diameters down to 8 nm are investigated. The impact of silicon nitride (SiN) spacer thickness (7, 10, or 15 nm) on short-channel performance is examined. The tradeoff between superior electrostatic confinement and electrical performance, which will be an essential consideration for the design of future NW devices, is clearly observed. Finally, a comparison with trigate NWs shows an improved electrostatic control for a cylindrical-shaped gate, as theoretically expected.
Keywords :
MOSFET; electrostatics; nanowires; silicon compounds; SiN; cylindrical-shaped gate; electrostatic confinement; electrostatic control; omega-shaped-gate silicon nanowire MOSFET; size 10 nm; size 15 nm; size 7 nm; size 8 nm; Electrostatics; MOSFET circuits; Nanowires; Scalability; Silicon; Electrostatic confinement; MOSFET; nanowire (NW); omega-gate; scalability; trigate (TG);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2212691
