Universal Reset Characteristics of Unipolar and Bipolar Metal-Oxide RRAM

Set and reset characteristics are studied for unipolar and bipolar metal-oxide resistive-switching memory devices. We show a universal dependence of set-state resistance and reset current on the compliance current used during set, with negligible impact of metal-oxide composition and switching condition. An analytical Joule-heating model for universal reset is presented, predicting a weak dependence of reset temperature and voltage on diffusion and migration parameters in both unipolar- and bipolar-switching modes. Data for the reset voltage are shown for a wide range of unipolar and bipolar metal oxides, in support of our calculations.