Effect of BOE etching time on wire bonding quality

Author

Tan, Cher Ming ; Linggajaya, Kaufik ; Er, Eddie ; Chai, Vincent Siew-Heong

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

22

Issue

4

fYear

1999

fDate

12/1/1999 12:00:00 AM

Firstpage

551

Lastpage

557

Abstract

The dependence of wire bond-pull strength on the morphology of the underlying polycrystalline silicon (poly-Si) beneath the bondpad metal is studied using atomic force microscopy (AFM). Statistical analysis shows that the roughness of the poly-Si is correlated with the wire bond-pull strength. The correlation is believed to be due to the effectiveness of thermal dissipation through poly-Si during the wire bonding process. Statistical analysis also shows that the roughness of the poly-Si is correlated to the buffered oxide etch (BOE) etching time before the bondpad metal deposition. In this work, it is concluded that the BOE etching time has a significant effect on the wire bonding quality. The roughness parameter that links the BOE etching time to the wire bond-pull strength is found to be the localization factor

Keywords

atomic force microscopy; etching; lead bonding; quality control; statistical analysis; surface topography; BOE etching time; Si; atomic force microscopy; bond-pull strength; bondpad metal deposition; buffered oxide etch; localization factor; polysilicon; roughness; thermal dissipation; wire bonding quality; Atomic force microscopy; Bonding forces; Etching; Rough surfaces; Silicon; Statistical analysis; Surface morphology; Surface roughness; Wafer bonding; Wire;

fLanguage

English

Journal_Title

Components and Packaging Technologies, IEEE Transactions on

Publisher

ieee

ISSN

1521-3331

Type

jour

DOI

10.1109/6144.814971

Filename

814971