Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE

Author

Yin, L.W. ; Hwang, Y. ; Lee, J.H. ; Kolbas, Robert M. ; Trew, Robert J. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

11

Issue

12

fYear

1990

Firstpage

561

Lastpage

563

Abstract

A metal-semiconductor field-effect transistor (MESFET) utilizing surface layers of GaAs grown at a low temperature by MBE (LT GaAs) under the gate electrode has been fabricated. The high trap density of LT GaAs reduces the surface fields of the FET, suppresses gate leakage, and increases the gate-drain breakdown voltage without sacrificing current drive capability. An undoped AlAs layer is incorporated between the LT GaAs layer and the channel as a barrier to the diffusion of excess As from the LT GaAs layer to the channel. A 74- mu m-gate-width device demonstrated an improved breakdown voltage of 34.85 V with a g/sub m/ of 144 mS/mm and an I/sub dss/ of 248 mA/mm.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; electron traps; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 34.85 V; 75 micron; GaAs; III-V semiconductors; MBE; MESFET; breakdown voltage; current drive capability; diffusion barrier; gate electrode; gate leakage; gate-drain breakdown voltage; surface fields; surface layers; trap density; Electric breakdown; Electrodes; FETs; Gallium arsenide; Gate leakage; Leakage current; MESFETs; Molecular beam epitaxial growth; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63040

Filename

63040