Low-temperature microwave characteristics of pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As modulation-doped field-effect transistors

Author

Lai, R. ; Bhattacharya, Pallab K. ; Alterovitz, S.A. ; Downey, A.N. ; Chorey, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

11

Issue

12

fYear

1990

Firstpage

564

Lastpage

566

Abstract

Low-temperature microwave measurements of both lattice-matched and pseudomorphic In/sub x/Ga/sub 1-x/As/In/sub 0.48/As (x=0.53, 0.60, and 0.70) channel MODFETs on InP substrates were carried out in a cryogenic measurement system. The measurements were done in the temperature range of 77 to 300 K and in the frequency range of 0.5 to 11.0 GHz at different bias conditions. The cutoff frequency (f/sub T/) for the In/sub x/Ga/sub 1-x/As/In/sub 0.52/Al/sub 0.48/As MODFETs improved from 22 to 29 GHz, 29 to 38 GHz, and 39 to 51 GHz, for x=0.53, 0.60, and 0.70, respectively, as the temperature was lowered from 300 to 77 K, which is approximately a 31% increase at each composition. No degradations were observed in device performance. These results indicate an excellent potential of the pseudomorphic devices at low temperatures.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.5 to 11.0 GHz; 77 to 300 K; III-V semiconductors; In/sub x/Ga/sub 1-x/As-In/sub 0.52/Al/sub 0.48/As; InP; bias conditions; cryogenic measurement system; cutoff frequency; device performance; lattice-matched; low temperatures; microwave characteristics; modulation-doped field-effect transistors; pseudomorphic; Cryogenics; Epitaxial layers; Frequency measurement; HEMTs; Indium phosphide; MODFETs; Microwave measurements; Molecular beam epitaxial growth; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63041

Filename

63041