Title :
The Zero-Temperature-Coefficient Point Modeling of DTMOS in CMOS Integration
Author :
Wang, Kuan-Ti ; Lin, Wan-Chyi ; Chao, Tien-Sheng
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
For the first time, analytical expressions of zero-temperature-coefficient (ZTC) point modeling of DTMOS transistor are successfully presented in detail. New analytical formulations for the linear and saturation regions of DTMOS transistor operation that make certain the drive current to be temperature independent for the ideal gate voltage are developed. The maximum errors of 0.87% and 2.35% in the linear and saturation regions, respectively, confirm a good agreement between our DTMOS ZTC point model and the experimental data. Compared to conventional MOSFET, the lower Vg (ZTC) with higher overdrive current of DTMOS improves the integrated circuit speed and efficiency for the low-power-consumption concept in green CMOS technology.
Keywords :
CMOS integrated circuits; MOSFET; low-power electronics; CMOS integration; DTMOS transistor; MOSFET; ZTC point modeling; gate voltage; green CMOS technology; integrated circuit speed; linear region; low-power-consumption; saturation region; zero-temperature-coefficient point modeling; CMOS integrated circuits; CMOS technology; Chaos; Data models; High speed integrated circuits; Integrated circuit modeling; Integrated circuit technology; Intrusion detection; Logic gates; MOSFET circuits; Semiconductor device modeling; Temperature; Temperature dependence; Temperature distribution; Threshold voltage; Transistors; Voltage; DTMOS; modeling; strain; zero temperature coefficient (ZTC);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2057404
