DocumentCode :
1286142
Title :
Bipolar Nonlinear 
Selector for 1S1R Crossbar Array Applications
Author :
Jiun-Jia Huang ; Yi-Ming Tseng ; Chung-Wei Hsu ; Tuo-Hung Hou
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
32
Issue :
10
fYear :
2011
Firstpage :
1427
Lastpage :
1429
Abstract :
A bipolar nonlinear selector to suppress the sneak current in the crossbar array has been fabricated using a simple Ni/TiO2/Ni metal-insulator-metal structure. The highly nonlinear current-voltage characteristics are realized by the Schottky emission over the Ni/TiO2 barriers. The series connection with an HfO2-resistive memory device shows reproducible bipolar resistive switching. The maximum array size with at least 10% read margin is projected to exceed megabits. This letter demonstrates the promise of the compact one selector-one resistor (1S1R) cell structure for high-density crossbar array applications.
Keywords :
MIM structures; Schottky barriers; hafnium compounds; nickel; random-access storage; titanium compounds; 1S1R cell structure; 1S1R crossbar array applications; HfO2; Ni-TiO2-Ni; Schottky emission; bipolar nonlinear selector; high-density crossbar array applications; maximum array size; metal-insulator-metal structure; nonlinear current-voltage characteristics; one selector-one resistor cell structure; reproducible bipolar resistive switching; resistive memory device; series connection; sneak current; Arrays; Electrodes; Nickel; Random access memory; Resistance; Resistors; Switches; $hbox{4F}^{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2161601
Filename :
5967885
Link To Document :
