Title :
NOTFET: a high-frequency InP nonlinear transistor
Author :
Majidi-Ahy, R. ; Bandy, S. ; Ching, L.Y. ; Glenn, M. ; Nishimoto, C. ; Weng, S.L. ; Zdasiuk, George
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
A device called the nonlinearly optimized transconductance field-effect transistor (NOTFET) has been developed for nonlinear circuit applications. An InP NOTFET with two g/sub m/ peaks based on InGaAs and InAlAs channels was designed fabricated, and tested for harmonic generation up to 12 GHz, demonstrating the device concept and its advantages compared to conventional FETs and HEMTs. Multipeak g/sub m//V/sub GS/ characteristics also can be obtained by using a multiheterojunction material structure with uncoupled quantum wells, a possibility which is under investigation.<>
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor quantum wells; III-V semiconductors; InP-InAlAs-InGaAs; NOTFET; harmonic generation; multiheterojunction material structure; multipeak characteristics; nonlinear circuit applications; nonlinear transistor; nonlinearly optimized transconductance field-effect transistor; uncoupled quantum wells; Circuit testing; FETs; Frequency conversion; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Nonlinear circuits; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
