NOTFET: a high-frequency InP nonlinear transistor

Author

Majidi-Ahy, R. ; Bandy, S. ; Ching, L.Y. ; Glenn, M. ; Nishimoto, C. ; Weng, S.L. ; Zdasiuk, George

Author_Institution

Varian Res. Center, Palo Alto, CA, USA

Volume

11

Issue

12

fYear

1990

Firstpage

582

Lastpage

584

Abstract

A device called the nonlinearly optimized transconductance field-effect transistor (NOTFET) has been developed for nonlinear circuit applications. An InP NOTFET with two g/sub m/ peaks based on InGaAs and InAlAs channels was designed fabricated, and tested for harmonic generation up to 12 GHz, demonstrating the device concept and its advantages compared to conventional FETs and HEMTs. Multipeak g/sub m//V/sub GS/ characteristics also can be obtained by using a multiheterojunction material structure with uncoupled quantum wells, a possibility which is under investigation.<>

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor quantum wells; III-V semiconductors; InP-InAlAs-InGaAs; NOTFET; harmonic generation; multiheterojunction material structure; multipeak characteristics; nonlinear circuit applications; nonlinear transistor; nonlinearly optimized transconductance field-effect transistor; uncoupled quantum wells; Circuit testing; FETs; Frequency conversion; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Nonlinear circuits; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63046

Filename

63046