A new technology for micromachining of silicon: dopant selective HF anodic etching for the realization of low-doped monocrystalline silicon structures

Author

Eijkel, C.J.M. ; Branebjerg, J. ; Elwenspoek, M. ; van de Pol, F.C.M.

Author_Institution

Twente Univ., Enschede, Netherlands

Volume

11

Issue

12

fYear

1990

Firstpage

588

Lastpage

589

Abstract

The sharp selectivity of HF anodic etching between p-Si and n-Si is used to realize monocrystalline silicon microstructures, in this case suspended beams, making use of masked implantation of phosphorous for the definition of the geometry. This technology offers opportunities in the field of micromachining of silicon for micromechanical applications. The technology is complementary to bulk micromachining (anisotropic KOH or EDP etching, or isotropic HF/HNO/sub 3/ etching) and surface micromachining with sacrificial-layer techniques.<>

Keywords

elemental semiconductors; etching; ion implantation; micromechanical devices; phosphorus; silicon; Si:P; bulk micromachining; dopant selective HF anodic etching; masked implantation; micromachining; micromechanical applications; sacrificial-layer techniques; surface micromachining; suspended beams; Aluminum; Doping; Etching; Hafnium; Micromachining; Micromechanical devices; Microstructure; Resists; Silicon; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.63048

Filename

63048