Title :
A new technology for micromachining of silicon: dopant selective HF anodic etching for the realization of low-doped monocrystalline silicon structures
Author :
Eijkel, C.J.M. ; Branebjerg, J. ; Elwenspoek, M. ; van de Pol, F.C.M.
Author_Institution :
Twente Univ., Enschede, Netherlands
Abstract :
The sharp selectivity of HF anodic etching between p-Si and n-Si is used to realize monocrystalline silicon microstructures, in this case suspended beams, making use of masked implantation of phosphorous for the definition of the geometry. This technology offers opportunities in the field of micromachining of silicon for micromechanical applications. The technology is complementary to bulk micromachining (anisotropic KOH or EDP etching, or isotropic HF/HNO/sub 3/ etching) and surface micromachining with sacrificial-layer techniques.<>
Keywords :
elemental semiconductors; etching; ion implantation; micromechanical devices; phosphorus; silicon; Si:P; bulk micromachining; dopant selective HF anodic etching; masked implantation; micromachining; micromechanical applications; sacrificial-layer techniques; surface micromachining; suspended beams; Aluminum; Doping; Etching; Hafnium; Micromachining; Micromechanical devices; Microstructure; Resists; Silicon; Voltage;
Journal_Title :
Electron Device Letters, IEEE
