Title :
Parasitic MOSFET degradation induced by Fowler-Nordheim injection
Author :
Kato, Masataka ; Nishioka, Yasushiro ; Okabe, Takeaki
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
Degradation induced by Fowler-Nordheim (F-N) electron injection is observed in a parasitic MOS transistor associated with a MOS transistor´s edge region. A bump appears in the subthreshold region of both an n-channel transistor after positive gate biased F-N injection and a p-channel transistor after negative gate biased F-N injection. It is found that the effective gate-oxide thickness of a parasitic transistor is 30 nm. As thinner gate oxide is used, the amount of the charge injected into the gate oxide may increase due to increased electric fields.<>
Keywords :
insulated gate field effect transistors; tunnelling; 30 nm; Fowler-Nordheim injection; MOSFET degradation; edge region; effective gate-oxide thickness; electric fields; n-channel transistor; p-channel transistor; parasitic MOS transistor; subthreshold region; CMOS process; Degradation; Electrons; Hot carriers; Leakage current; MOSFET circuits; Region 6; Solids; Stress; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
