DocumentCode
1286461
Title
Inquisitive Defect Cache: A Means of Combating Manufacturing Induced Process Variation
Author
Sasan, Avesta ; Homayoun, Houman ; Eltawil, Ahmed M. ; Kurdahi, Fadi
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Irvine, Irvine, CA, USA
Volume
19
Issue
9
fYear
2011
Firstpage
1597
Lastpage
1609
Abstract
This paper proposes a new fault tolerant cache organization capable of dynamically mapping the in-use defective locations in a processor cache to an auxiliary parallel memory, creating a defect-free view of the cache for the processor. While voltage scaling has a super-linear effect on reducing power, it exponentially increases the defect rate in memory. The ability of the proposed cache organization to tolerate a large number of defects makes it a perfect candidate for voltage-scalable architectures, especially in smaller geometries where manufacturing induced process variation (MIPV) is expected to rapidly increase. The introduced fault tolerant architecture consumes little energy and area overhead, but enables the system to operate correctly and boosts the system performance close to a defect-free system. Power savings of over 40% is reported on standard benchmarks while the performance degradation is maintained below 1%.
Keywords
SRAM chips; cache storage; fault tolerance; integrated circuit manufacture; integrated circuit reliability; manufacturing processes; SRAM structures; auxiliary parallel memory; defect-free system; fault tolerant architecture; fault tolerant cache organization; inquisitive defect cache; manufacturing induced process variation; processor cache; voltage scaling; voltage-scalable architectures; Degradation; Fault tolerance; Fault tolerant systems; Frequency; Geometry; Manufacturing processes; Pulp manufacturing; Read-write memory; System performance; Voltage; Cache; SRAM; fault tolerance; low power; process variation; voltage scaling;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2010.2055589
Filename
5540313
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