DocumentCode :
1286461
Title :
Inquisitive Defect Cache: A Means of Combating Manufacturing Induced Process Variation
Author :
Sasan, Avesta ; Homayoun, Houman ; Eltawil, Ahmed M. ; Kurdahi, Fadi
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Irvine, Irvine, CA, USA
Volume :
19
Issue :
9
fYear :
2011
Firstpage :
1597
Lastpage :
1609
Abstract :
This paper proposes a new fault tolerant cache organization capable of dynamically mapping the in-use defective locations in a processor cache to an auxiliary parallel memory, creating a defect-free view of the cache for the processor. While voltage scaling has a super-linear effect on reducing power, it exponentially increases the defect rate in memory. The ability of the proposed cache organization to tolerate a large number of defects makes it a perfect candidate for voltage-scalable architectures, especially in smaller geometries where manufacturing induced process variation (MIPV) is expected to rapidly increase. The introduced fault tolerant architecture consumes little energy and area overhead, but enables the system to operate correctly and boosts the system performance close to a defect-free system. Power savings of over 40% is reported on standard benchmarks while the performance degradation is maintained below 1%.
Keywords :
SRAM chips; cache storage; fault tolerance; integrated circuit manufacture; integrated circuit reliability; manufacturing processes; SRAM structures; auxiliary parallel memory; defect-free system; fault tolerant architecture; fault tolerant cache organization; inquisitive defect cache; manufacturing induced process variation; processor cache; voltage scaling; voltage-scalable architectures; Degradation; Fault tolerance; Fault tolerant systems; Frequency; Geometry; Manufacturing processes; Pulp manufacturing; Read-write memory; System performance; Voltage; Cache; SRAM; fault tolerance; low power; process variation; voltage scaling;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2010.2055589
Filename :
5540313
Link To Document :
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