• DocumentCode
    1286532
  • Title

    A 1.2-V 5.2-mW 20–30-GHz Wideband Receiver Front-End in 0.18- \\mu{\\hbox {m}} CMOS

  • Author

    Li, Chun-Hsing ; Kuo, Chien-Nan ; Kuo, Ming-Ching

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    60
  • Issue
    11
  • fYear
    2012
  • Firstpage
    3502
  • Lastpage
    3512
  • Abstract
    This paper presents a low-power wideband receiver front-end design using a resonator coupling technique. Inductively coupled resonators, composed of an on-chip transformer and parasitic capacitances from a low-noise amplifier, a mixer, and the transformer itself, not only provide wideband signal transfer, but also realize wideband high-to-low impedance transformation. The coupled resonators also function as a wideband balun to give single-to-differential conversion. Analytic expressions for the coupled resonators with asymmetric loads are presented for design guidelines. The proposed receiver front-end only needs a few passive components so that gain degradation caused by the passive loss is minimized. Hence, power consumption and chip area can be greatly reduced. The chip is implemented in 0.18-μm CMOS technology. The experimental result shows that the - 3-dB bandwidth can span from 20 to 30 GHz with a peak conversion gain of 18.7 dB. The measured input return loss and third-order intercept point are better than 16.7 dB and -7.6 dBm, respectively, over the bandwidth. The minimum noise figure is 7.1 dB. The power consumption is only 5.2 mW from a 1.2-V supply. The chip area is only 0.18 mm2 .
  • Keywords
    CMOS integrated circuits; baluns; coupled circuits; field effect MMIC; integrated circuit design; losses; low-power electronics; microwave resonators; passive networks; CMOS process; bandwidth 20 GHz to 30 GHz; gain -3 dB; gain 18.7 dB; gain degradation; inductively coupled resonator technique; input return loss measurement; low-noise amplifier; low-power wideband receiver front-end design; mixer; noise figure 7.1 dB; on-chip transformer; parasitic capacitance; passive component; passive loss minimization; peak conversion gain; power 5.2 mW; power consumption; single-to-differential conversion; size 0.18 mum; third-order intercept point; voltage 1.2 V; wideband balun; wideband high-to-low impedance transformation; wideband signal transfer; Couplings; Gain; Impedance; Mixers; Receivers; Resonant frequency; Wideband; CMOS; common-gate (CG) low-noise amplifier (LNA); inductively coupled resonators (ICRs); low power; low voltage; mixer; resonator coupling network (RCN); wideband;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2012.2216285
  • Filename
    6304941