DocumentCode :
1286539
Title :
Systematic Compact Modeling of Correlated Noise in Bipolar Transistors
Author :
Herricht, Jörg ; Sakalas, Paulius ; Ramonas, Mindaugas ; Schroter, Michael ; Jungemann, Christoph ; Mukherjee, Anindya ; Moebus, Kai Erik
Author_Institution :
Dept. of Electron. Devices & Integrated Circuits (CEDIC), Tech. Univ. Dresden, Dresden, Germany
Volume :
60
Issue :
11
fYear :
2012
Firstpage :
3403
Lastpage :
3412
Abstract :
A systematic method for the integration of correlated shot-noise sources into compact models (CMs) is presented, which significantly improves the accuracy of predicted high-frequency noise in transistors. The developed method relies on a system theory approach, and hence, is not limited to specific CM or device type. In this paper, the method is applied to the CM HICUM, which serves a vehicle for verification purposes. The method and its implementation were verified for SiGe heterojunction bipolar transistors based on measured data for frequencies up to 50 GHz, as well as on device simulation data up to 500 GHz, obtained from simulations of both hydrodynamic and a Boltzmann transport model.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; semiconductor device noise; shot noise; Boltzmann transport model; CM HICUM; SiGe; compact models; correlated shot-noise sources; heterojunction bipolar transistors; predicted high-frequency noise; systematic compact modeling; Correlation; Delay; Heterojunction bipolar transistors; Integrated circuit modeling; Mathematical model; Noise; Silicon germanium; Boltzmann transport equation (BTE); compact modeling; correlated noise; heterojunction bipolar transistor (HBT); high-frequency (HF) noise; hydrodynamic (HD) model; minimum noise figure (NF);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2012.2216284
Filename :
6304942
Link To Document :
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