Title :
Silicon photonics for next generation FDM/FDMA PON
Author :
Charbonnier, B. ; Menezo, Sylvie ; O´Brien, P. ; Lebreton, Aurélien ; Fedeli, J.M. ; Ben Bakir, B.
Author_Institution :
France Telecom R&D, Lannion, France
Abstract :
Frequency division multiplexing/frequency division multi-access passive optical networks are shown to provide a possible solution in terms of performance, manufacturability and cost to the specification of the second next generation passive optical access systems (NG-PON2). The upstream capacity of a particular implementation is experimentally evaluated, and the implementation of the required optical network unit in silicon photonics is analyzed, as this complementary-metal-oxide-semiconductor-compatible technology is well suited for mass market applications.
Keywords :
CMOS integrated circuits; channel capacity; elemental semiconductors; frequency division multiple access; frequency division multiplexing; passive optical networks; silicon; FDMA; PON; Si; complementary-metal-oxide-semiconductor-compatible technology; frequency division multiple access; frequency division multiplexing; next generation passive optical access systems; passive optical networks; photonics; upstream capacity; Bit error rate; Optical attenuators; Optical modulation; Optical network units; Passive optical networks; Radio frequency; Frequency division multi-access; Optical fiber networks; Optical transmitters; Silicon-on-insulator technology;
Journal_Title :
Optical Communications and Networking, IEEE/OSA Journal of
DOI :
10.1364/JOCN.4.000A29
