Title :
A new method of determination of the I-V characteristics of negative differential conductance devices by microwave reflection coefficient measurements
Author :
Huang, P. ; Pan, D.S. ; Luhmann, N.C., Jr.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
A technique to map out all of the I-V characteristics of negative differential conductance (NDC) devices is described. This method uses the DC measurable positive conductance portions of the I-V curve together with the measured microwave reflection coefficients at different RF signal levels and fixed DC bias voltage. The advantages of the method for high NDC devices are pointed out in a stability analysis. The complete I-V curve of a tunnel diode has been obtained with an accuracy within 5% in a proof-of-principal test of this method.<>
Keywords :
characteristics measurement; microwave measurement; negative resistance; semiconductor device testing; tunnel diodes; DC bias voltage; DC measurable positive conductance portions; I-V characteristics; I-V curve; RF signal levels; microwave reflection coefficient measurements; microwave reflection coefficients; negative differential conductance devices; stability analysis; tunnel diode; Circuits; Diodes; Frequency; Measurement standards; Microwave devices; Microwave measurements; Microwave theory and techniques; Quantum well devices; Reflection; Stability analysis;
Journal_Title :
Electron Device Letters, IEEE
