Application of Exponential Tail-State Distribution Model to the Above-Threshold Characteristics of Zn-Based Oxide Thin-Film Transistors

Author

Takechi, Kazushige ; Nakata, Mitsuru ; Eguchi, Toshimasa ; Yamaguchi, Hirotaka ; Kaneko, Shin

Author_Institution

NEC LCD Technol., Ltd., Kawasaki, Japan

Volume

56

Issue

9

fYear

2009

Firstpage

2165

Lastpage

2168

Abstract

Our experimental results for amorphous InGaZnO₄ and polycrystalline ZnO TFTs show a gate-voltage-dependent transconductance that is somewhat different from that for crystalline MOSFETs. We show that a model of the exponential distribution of band tail states can be used to describe the above-threshold behavior of Zn-based oxide TFTs.

Keywords

II-VI semiconductors; amorphous semiconductors; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO₄; ZnO; amorphous semiconductors; exponential tail-state distribution; gate-voltage-dependent transconductance; polycrystalline thin film transistors; zinc-based oxide; Amorphous materials; Annealing; Crystallization; Exponential distribution; National electric code; Plasma temperature; Probability distribution; Silicon; Thin film transistors; Zinc oxide; Amorphous silicon; oxide semiconductor; polycrystalline silicon (pc-Si); structural disorder; tail-state distribution; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2026392

Filename

5191117