Title :
A qualitative comparison between two semiconductor laser amplifier equivalent circuit models
Author_Institution :
Dept. of Electr. & Electron. Eng., Nottingham Univ., UK
fDate :
8/1/1990 12:00:00 AM
Abstract :
Two different forms of equivalent circuit models have been independently proposed for semiconductor laser amplifiers. These have interesting similarities in their equivalent circuits. A comparison is made of the models in terms of derivation, completeness, applications, and computing speed. Results from the transmission line laser model (TLLM) are presented and show the effects of input power, carrier inhomogeneities, and front facet reflectivity on two-input intermodulation distortion
Keywords :
equivalent circuits; laser theory; semiconductor device models; semiconductor junction lasers; applications; carrier inhomogeneities; completeness; computing speed; derivation; equivalent circuit models; front facet reflectivity; input power; qualitative comparison; semiconductor laser amplifiers; transmission line laser model; two-input intermodulation distortion; Computer applications; Distributed parameter circuits; Equivalent circuits; Laser modes; Laser noise; Power lasers; Power transmission lines; Reflectivity; Semiconductor lasers; Semiconductor optical amplifiers;
Journal_Title :
Quantum Electronics, IEEE Journal of
