A qualitative comparison between two semiconductor laser amplifier equivalent circuit models

Author

Lowery, A.J.

Author_Institution

Dept. of Electr. & Electron. Eng., Nottingham Univ., UK

Volume

26

Issue

8

fYear

1990

fDate

8/1/1990 12:00:00 AM

Firstpage

1369

Lastpage

1375

Abstract

Two different forms of equivalent circuit models have been independently proposed for semiconductor laser amplifiers. These have interesting similarities in their equivalent circuits. A comparison is made of the models in terms of derivation, completeness, applications, and computing speed. Results from the transmission line laser model (TLLM) are presented and show the effects of input power, carrier inhomogeneities, and front facet reflectivity on two-input intermodulation distortion

Keywords

equivalent circuits; laser theory; semiconductor device models; semiconductor junction lasers; applications; carrier inhomogeneities; completeness; computing speed; derivation; equivalent circuit models; front facet reflectivity; input power; qualitative comparison; semiconductor laser amplifiers; transmission line laser model; two-input intermodulation distortion; Computer applications; Distributed parameter circuits; Equivalent circuits; Laser modes; Laser noise; Power lasers; Power transmission lines; Reflectivity; Semiconductor lasers; Semiconductor optical amplifiers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.59684

Filename

59684