Title :
Y-junction power divider in InGaAsP-InP photonic integrated circuits
Author :
Liou, Kang-Yih ; Koren, U. ; Burrows, Ellsworth C. ; Young, M. ; Martyak, M.J.R. ; Oron, Moshe ; Raybon, Gregory
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
8/1/1990 12:00:00 AM
Abstract :
A demonstration is presented of an InGaAsP-InP asymmetric waveguide Y junction with a power dividing ratio which is independent of the polarization of the input light. The Y junction is monolithically integrated with an active optical gain section by metalorganic chemical vapor deposition (MOCVD). The integrated chip represents a fundamental building block for photonic integrated circuits. Experimental results are in agreement with a theoretical analysis of the Y junction. The theory shows a low radiation loss (0.4 dB) and negligible power reflection (-63 dB) at the Y junction, which is ideal for monolithic integration with active devices. They also report on an integrated optical amplifier Y-junction-monitoring detector chip as an example of a photonic integrated circuit that employs the new Y-junction design. The estimated excess loss of the Y junction was 1.4 dB for the integrated chip, and the Y-junction reflectivity was found to be negligible
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; optical losses; optical waveguide components; 0.4 dB; 1.4 dB; III-V semiconductor; InGaAsP-InP; MOCVD; Y-junction power divider; active optical gain section; asymmetric waveguide Y junction; excess loss; integrated chip; integrated optical amplifier Y-junction-monitoring detector chip; low radiation loss; metalorganic chemical vapor deposition; monolithic integration; photonic integrated circuits; power dividing ratio; Chemical vapor deposition; Integrated optics; MOCVD; Optical losses; Optical polarization; Optical reflection; Optical waveguides; Photonic integrated circuits; Power dividers; Waveguide junctions;
Journal_Title :
Quantum Electronics, IEEE Journal of
