Title :
1.3-μm Vertical-cavity surface-emitting lasers with double-bonded GaAs-AlAs Bragg mirrors
Author :
Qian, Y. ; Zhu, Z.H. ; Lo, Y.H. ; Hou, H.Q. ; Wang, M.C. ; Lin, W.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
We demonstrate, for the first time, double-bonded AlGaInAs strain-compensated quantum-well 1.3-μm vertical-cavity surface-emitting lasers (VCSELs). GaAs-AlAs Bragg mirrors were wafer-bonded on both sides of a cavity containing the AlGaInAs strain-compensated multiple-quantum-well active layers sandwiched by two InP layers. The lasers have operated under pulsed conditions at room temperature. A record low pulsed threshold current density of 4.2 kA/cm2 and a highest maximum light output power greater than 4.6 mW have been achieved. The maximum threshold current characteristic temperature T0 of 132 K is the best for any long wavelength VCSELs. The laser operated in a single-longitudinal mode, with a side-mode suppression ratio of more than 40 dB, which is the best results for 1.3-μm VCSELs.
Keywords :
III-V semiconductors; aluminium compounds; current density; distributed Bragg reflector lasers; gallium arsenide; laser cavity resonators; laser modes; laser transitions; mirrors; quantum well lasers; surface emitting lasers; wafer bonding; 1.3 mum; 132 K; 4.6 mW; AlGaInAs; AlGaInAs strain-compensated multiple-quantum-well active layers; AlGaInAs strain-compensated quantum-well 1.3-/spl mu/m VCSEL; GaAs-AlAs; InP; InP layers; double-bonded GaAs-AlAs Bragg mirrors; light output power; pulsed conditions; pulsed threshold current density; room temperature; side-mode suppression ratio; single-longitudinal mode; vertical-cavity surface-emitting lasers; wafer-bonding; Indium phosphide; Mirrors; Optical pulses; Power generation; Quantum well devices; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
