Title :
Low-threshold loss-coupled laser diode by new grating fabrication technique
Author :
Chongdae Park ; Jeong Soo Kim ; Dae Kon Oh ; Dong Hoon Jang ; Chan Yong Park ; Joo Heon Ahn ; Hyoung Moon Kim ; Heung Ro Choo ; Hongman Kim ; Kwang Eui Pyun
Author_Institution :
Compound Semicond. Dept., Electron. & Telecommun. Res. Inst., Taejon, South Korea
Abstract :
We introduce a novel fabrication method to make InGaAs absorptive first-order grating for loss-coupled distributed feedback laser diode (DFB-LD) using reactive ion etching. By this technique, it is possible to control duty rate of the first-order grating. A very-low-threshold current of 6 mA was obtained from our loss-coupled LD at the wavelength of 1.547 μm, which was unusually high for a loss-coupled LD because of the excessive light absorption. In addition to the low-threshold current, it shows high SMSR and longitudinal single-mode yield as high as 50 dB and 90%, respectively.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; infrared sources; laser modes; laser transitions; optical couplers; optical fabrication; optical losses; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.547 mum; 6 mA; InGaAs; InGaAs absorptive first-order grating; duty rate; excessive light absorption; fabrication method; first-order grating; grating fabrication technique; longitudinal single-mode yield; loss-coupled LD; loss-coupled distributed feedback laser diode; low-threshold current; low-threshold loss-coupled laser diode; reactive ion etching; very-low-threshold current; Absorption; Chirp; Diode lasers; Etching; Gratings; Indium gallium arsenide; Laser feedback; Optical coupling; Optical device fabrication; Silicon compounds;
Journal_Title :
Photonics Technology Letters, IEEE
