Title :
30-GHz bandwidth 1.55-μm strain-compensated InGaAlAs-InGaAsP MQW laser
Author :
Matsui, Y. ; Murai, Hitoshi ; Arahira, S. ; Kutsuzawa, S. ; Ogawa, Y.
Author_Institution :
Femtosecond Technol. Res. Assoc., Ibaraki, Japan
Abstract :
High-speed 1.55 μm laser diodes with a 3-dB modulation bandwidths of 30 GHz were fabricated by using short-cavity mushroom structures with undoped, strain-compensated InGaAlAs-InGaAsP twenty-quantum-well active regions. The bandwidths were achieved at low bias current of 100 mA. The laser exhibited a high differential gain of 1.54×10/sup -15/ cm2 and a small K factor of 0.135 ns. These results were achieved by using an In/sub 0.386/Ga/sub 0.465/AlAs barrier with 0.83% tensile strain to reduce the thermal emission time of holes from wells and hence the hole transport time.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hole mobility; indium compounds; infrared sources; laser cavity resonators; laser transitions; optical fabrication; quantum well lasers; /spl mu/m strain-compensated; 0.135 ns; 1.55 mum; 100 mA; 30 GHz; GHz bandwidth; In/sub 0.386/Ga/sub 0.465/AlAs barrier; InGaAlAs-InGaAsP; InGaAlAs-InGaAsP MQW laser; dB modulation bandwidths; high differential gain; high-speed /spl mu/m laser diodes; hole transport time; low bias current; short-cavity mushroom structures; small K factor; tensile strain; thermal emission time; undoped strain-compensated InGaAlAs-InGaAsP twenty-quantum-well active regions; Bandwidth; Capacitive sensors; Diode lasers; Epitaxial growth; Epitaxial layers; Quantum well devices; Quantum well lasers; Semiconductor lasers; Tensile strain; Thermionic emission;
Journal_Title :
Photonics Technology Letters, IEEE
