Induced nanosecond absorption in InP:Fe

Author

Halter, P.U. ; Fabre, J.C. ; Roosen, Gérald

Author_Institution

Inst. d´´Opt. Theorique et Appliquee, Centre Univ. d´´Orsay, France

Volume

26

Issue

8

fYear

1990

fDate

8/1/1990 12:00:00 AM

Firstpage

1425

Lastpage

1423

Abstract

Induced absorption was observed in an InP:Fe crystal under nanosecond pulse illumination at 1.06-μm wavelength. The maximum induced absorption was 0.05 cm^-1 when probed at a 1.06-μm wavelength and 0.30 cm^-1 when probed at a 1.30-μm wavelength. The kinetics are studied together with the photocurrent giving the recombination times of holes (100 ns) at room temperature and an estimate for that of electrons (0.5 ns). The induced absorption is attributed to a population redistribution of the different iron impurity states. Computer simulations are able to explain all the features found in the experiments and give values for the photoionization cross sections, in particular for the unknown cross section Fe^2+*→Fe³⁺+e^-

Keywords

III-V semiconductors; carrier lifetime; electron-hole recombination; indium compounds; ionisation of solids; iron; nonlinear optics; photoconductivity; photoionisation; photorefractive effect; 0.5 ns; 1.06 micron; 1.30 micron; 100 ns; III-V semiconductor; InP:Fe; computer simulations; electron recombination time; hole recombination time; induced nanosecond absorption; nanosecond pulse illumination; photocurrent; photoionization cross sections; photorefractive effect; population redistribution; room temperature; Absorption; Charge carrier processes; Computer simulation; Impurities; Iron; Kinetic theory; Lighting; Photoconductivity; Spontaneous emission; Temperature;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.59692

Filename

59692