Title :
A new three-terminal thyristor-based high-power switching configuration with high-voltage current saturation
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
fDate :
7/1/1997 12:00:00 AM
Abstract :
A new high-voltage power switch configuration having thyristor based on-state current conduction together with high-voltage current saturation characteristics is described. Current saturation is obtained in the new thyristor structure by diverting part of the base current at a predesigned current level to bring the NPN and PNP transistors comprising the thyristor out of their regeneratively-coupled conduction mode. The concept has been experimentally verified by fabricating 1200 V, 175 A devices.
Keywords :
MOS-controlled thyristors; power semiconductor switches; 1200 V; 175 A; NPN transistor; PNP transistor; high-power switch; high-voltage current saturation; on-state current conduction; three-terminal thyristor; Cathodes; Insulated gate bipolar transistors; Insulation; MOSFET circuits; Physics; Silicon on insulator technology; Switching circuits; Threshold voltage; Thyristors;
Journal_Title :
Electron Device Letters, IEEE
