Title :
Nitrogen-doped poly spacer local oxidation
Author :
Huang, S.-F. ; Griffin, P.B. ; Rissman, P. ; Plummer, J.D.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
fDate :
7/1/1997 12:00:00 AM
Abstract :
A novel isolation technique which consists of a modified local oxidation of silicon (LOCOS) process with a nitrogen-doped amorphous-Si spacer has been developed. Nitrogen doping of amorphous-Si reduces its oxide growth rate. This isolation process shows the least encroachment, smallest maximum stress, and a deeper field oxide recess as compared to standard LOCOS or poly spacer LOCOS. The oxidation of nitrogen-doped amorphous-Si also has been simulated by an equivalent stacked layer.
Keywords :
elemental semiconductors; isolation technology; nitrogen; oxidation; silicon; LOCOS; Si:N; isolation technology; local oxidation of silicon; nitrogen-doped amorphous silicon spacer; nitrogen-doped polysilicon spacer; stacked layer; Circuit simulation; Doping; Etching; Isolation technology; Laboratories; Nitrogen; Oxidation; Silicon; Stress; Temperature;
Journal_Title :
Electron Device Letters, IEEE
