Title :
Low-voltage phase modulation in GaAs/AlGaAs quantum well optical waveguides
Author :
Zucker, J.E. ; Burrus, C.A.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ
fDate :
1/21/1988 12:00:00 AM
Abstract :
Reports GaAs/AlGaAs quantum well waveguide phase modulators with high phase shift coefficients, as large as 520 degrees per V mm. By operating at wavelengths far below the bandedge and applying DC bias the authors achieve large electro-optic modulation with low absorption loss in device lengths on the order of 100 μm and drive voltages on the order of 1 V
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; optical modulation; optical waveguides; phase modulation; semiconductor junctions; 1 V; 100 micron; DC bias; GaAs-AlGaAs waveguide modultors; absorption loss; device lengths; drive voltages; electro-optic modulation; high phase shift coefficients; low voltage phase modulation; quantum well optical waveguides; quantum well waveguide phase modulators; refractive index modulation; semiconductors;
Journal_Title :
Electronics Letters
