A monolithic dual-band HgCdTe infrared detector structure

Author

Parish, G. ; Musca, C.A. ; Siliquini, J.F. ; Antoszewki, J. ; Dell, J.M. ; Nener, B.D. ; Faraone, L. ; Gouws, G.J.

Author_Institution

Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia

Volume

18

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

352

Lastpage

354

Abstract

A monolithic HgCdTe photoconductive device structure is presented that is suitable for dual-band optically registered infrared photodetection in the two atmospheric transmission windows of 3-5 μm and 8-12 μm, which correspond to the mid-wave and long-wave infrared bands; MWIR and LWIR, respectively. The proposed structure employs a wider bandgap isolating layer between the two photosensitive layers such that an effective electrical barrier is formed thus prohibiting carrier transport between the two infrared absorbing layers of different cutoff wavelengths. The technology is demonstrated using a mature HgCdTe photoconductive device fabrication process. The resulting detectors have an MWIR cutoff of 5.0 μm, and LWIR cutoff of 10.5 μm.

Keywords

II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; photoconducting devices; 3 to 5 micron; 8 to 12 micron; HgCdTe; LWIR band; MWIR band; atmospheric transmission window; dual-band optically registered infrared photodetector; electrical barrier; isolating layer; monolithic photoconductive device; Annealing; Dual band; Fabrication; Infrared detectors; Isolation technology; Optical devices; Passivation; Photoconducting devices; Photoconducting materials; Photonic band gap;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.596934

Filename

596934