DocumentCode
1287391
Title
Single-Photon Avalanche Diode CMOS Sensor for Time-Resolved Fluorescence Measurements
Author
Stoppa, David ; Mosconi, Daniel ; Pancheri, Lucio ; Gonzo, Lorenzo
Author_Institution
Fondazione Bruno Kessler-Centro per la Ricerca Scientifica e Tecnol. (FBK-irst), Povo, Italy
Volume
9
Issue
9
fYear
2009
Firstpage
1084
Lastpage
1090
Abstract
A single-photon avalanche diode-based pixel array for the analysis of fluorescence phenomena is presented. Each 180 times 150 - mum2 pixel integrates a single photon detector combined with an active quenching circuit and a 17-bit digital events counter. On-chip master logic provides the digital control phases required by the pixel array with a full programmability of the main timing synchronisms. The pixel exhibits an average dark count rate of 3 kcps and a dynamic range of over 120-dB in time uncorrelated operation. A complete characterization of the single photon avalanche diode characteristics is reported. Time-resolved fluorescence measurements have been demonstrated by detecting the fluorescence decay of quantum-dot samples without the aid of any optical filters for excitation laser light cutoff.
Keywords
CMOS image sensors; avalanche diodes; photodetectors; CMOS sensor; active quenching circuit; digital control; digital events counter; excitation laser light cutoff; onchip master logic; optical filters; photon detector; pixel array; quantum-dot fluorescence decay; single-photon avalanche diode sensor; time-gating; time-resolved fluorescence measurements; timing synchronisms; Counting circuits; Detectors; Diodes; Event detection; Fluorescence; Integrated circuit measurements; Optoelectronic and photonic sensors; Phased arrays; Programmable logic arrays; Sensor phenomena and characterization; CMOS; fluorescence lifetime; single-photon avalanche diode (SPAD); time-gating;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2009.2025581
Filename
5191280
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